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Patent — available for licensing
Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structures
A NASA invention available to explore as a licensing opportunity.
About this technology
Overview
NASA Langley Research Center has developed a double sided Si(Ge)/Sapphire/III-Nitride hybrid structure. This technology uses both sides of a sapphire wafer to build device structures; on one side, making either Si or SiGe devices, and on the other side, making III-nitride device structures (e.g. GaN, InGaN, AlGaN). This innovation builds upon several previous innovations by NASA Langley Research Center, all relating to making silicon germanium semiconductor device structures on sapphire wafers.