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Patent — available for licensing
Single Crystal SiGe/Sapphire Epitaxy
A NASA invention available to explore as a licensing opportunity.
About this technology
Overview
NASA's Langley Research Center has developed a new, low temperature method of SiGe/sapphire growth that produces the same single crystal films with much less thermal loading effort to the substrate. This eliminates the time-consuming and costly high heating, long thermal soak times, and interfacial Si layer. Yield and throughput are increased as time to production is reduced from over 4 hours to less than 1 hour. The same quality of SiGe/sapphire is produced with far less effort and time, bringing it to within the realm of mass production.