Patent — available for licensing
Simplified Complimentary Metal-oxide-semiconductor Manufacturing Technique
A NASA invention available to explore as a licensing opportunity.
About this technology
Overview
Current microfabrication methods are well established for processing of Si-based complementary metal-oxide-semiconductor (CMOS) and only get more complex with each iteration. This is especially true with 3D transistors that require very selective placement and selective removal of materials required to reach a working product. However, with NASA's newly developed masking and deposition processes, photoresists, UV exposures and selective etching can be eliminated, with metal removal reduced to only planarization. This revised process reduces the total material and time requirements drastically when compared to current standards. These advancements offer the benefits of increasing total possible throughput while simultaneously reducing manufacturing cost per unit.