Patent — available for licensing
Metallization for SiC Semiconductors
A NASA invention available to explore as a licensing opportunity.
About this technology
Overview
Scientists at NASA's Glenn Research Center have developed and patented improved ohmic contacts, and a fabrication method for them, that will speed the production of silicon carbide (SiC) sensors and electronics that operate in high-temperature, harsh environments. Conventional fabrication techniques require multiple time-consuming and costly processes to form ohmic contacts separately onto donor (n-type) and acceptor (p-type) surfaces. Glenn's innovation creates universal and simultaneous ohmic contacts for both n- and p-type SiC semiconductors without compromising reliability and contact robustness. These ohmic contacts make it significantly less expensive and easier to fabricate high-temperature SiC sensors and electronics that can monitor in real time, even within harsh environments such as jet and rocket engines.